How does wider depletion region benefit a photo diode?

The benefit of a wider depletion region in a photodiode primarily relates to its ability to capture incident light more effectively. A wider depletion region means that a larger volume of the semiconductor material is available for light absorption. This larger target area allows for more photons to be absorbed, which in turn leads to the generation of more electron-hole pairs. As a result, the photocurrent produced by the diode increases, enhancing its overall sensitivity and performance as a light sensor.

In addition, the wider depletion region can also help improve the collection efficiency of the generated carriers, as the electric field within the depletion region can sweep the electron-hole pairs to the electrodes more efficiently. This characteristic is crucial for applications where the response to incoming light needs to be rapid and effective.

While the other options touch on important aspects of photodiodes, their benefits do not relate to the advantage of a wider depletion region in the same way. For example, the reverse leakage current and thermal breakdown concerns are focused on stability and reliability rather than light absorption. Similarly, forward bias efficiency relates to how a diode functions when conducting current, which is distinct from how effectively it operates as a photodetector. Thus, the choice highlighting the larger target area for incident light captures the essence of how