What happens in a semiconductor under forward bias regarding junction charge carriers?

Under forward bias, a semiconductor junction experiences a significant change in the behavior of charge carriers. When a forward bias is applied, the electric field across the junction is reduced, allowing for the injection of carriers from the external circuit into the junction.

In this context, electrons from the N-side of the junction are indeed attracted toward the P-side due to the reduction of the potential barrier. This attraction occurs as the majority charge carriers in the N-type material (electrons) are pulled towards the P-type material where there are fewer electrons (and more holes). As a result, these electrons can recombine with holes on the P-side, facilitating current flow through the semiconductor.

This dynamic is essential for the operation of devices such as diodes and transistors, where the forward bias condition is used to control the flow of electrical current. Understanding the movement of charge carriers under these conditions is crucial for grasping how semiconductor devices function in various applications.